Title :
Assessment of High-Temperature Metallizations for I2L and CMOS Technologies
Author :
Christou, Aristos ; Wilkins, Billy R.
Author_Institution :
Naval Research Laboratory, Washington, DC 20375.
fDate :
5/1/1982 12:00:00 AM
Abstract :
Nearly amorphous TiW layers are shown to be thermally stable for high-temperature LSI technologies. Alternatives are based on TiW/TiO2 and TiW(N) and result in improved stability for temperatures about 350°C. The diffusion coefficient for the Au/TiW couple is -10-11 cm2/s for gram-boundary diffusion at 350°C and 10-15 cm2/s for bulk diffusion at 350°C.
Keywords :
Annealing; Atomic layer deposition; CMOS technology; Electronic equipment testing; Gold; Grain size; Metallization; Optical films; Substrates; Temperature;
Journal_Title :
Industrial Electronics, IEEE Transactions on
DOI :
10.1109/TIE.1982.356652
