• DocumentCode
    827399
  • Title

    Assessment of High-Temperature Metallizations for I2L and CMOS Technologies

  • Author

    Christou, Aristos ; Wilkins, Billy R.

  • Author_Institution
    Naval Research Laboratory, Washington, DC 20375.
  • Issue
    2
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    145
  • Lastpage
    148
  • Abstract
    Nearly amorphous TiW layers are shown to be thermally stable for high-temperature LSI technologies. Alternatives are based on TiW/TiO2 and TiW(N) and result in improved stability for temperatures about 350°C. The diffusion coefficient for the Au/TiW couple is -10-11 cm2/s for gram-boundary diffusion at 350°C and 10-15 cm2/s for bulk diffusion at 350°C.
  • Keywords
    Annealing; Atomic layer deposition; CMOS technology; Electronic equipment testing; Gold; Grain size; Metallization; Optical films; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Industrial Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0046
  • Type

    jour

  • DOI
    10.1109/TIE.1982.356652
  • Filename
    4180381
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=827399