Title :
Low threshold current 1.5- mu m buried heterostructure lasers using strained quaternary quantum wells
Author :
Osinski, J.S. ; Grodzinski, P. ; Zou, Y. ; Dapkus, P.D. ; Karim, Z. ; Tanguay, A.R., Jr.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Buried heterostructure lasers operating at a wavelength of 1.5 mu m with four compressively strained quaternary quantum wells (strain approximately 1.8%, thickness approximately 90 AA) and current blocking layers were made using atmospheric pressure metalorganic chemical vapor deposition. Pulsed room-temperature threshold currents for uncoated devices as low as 4.1 mA and as low as 0.8 mA for devices with high reflectivity mirror coatings are reported. The dependence of threshold current on active region width is consistent with broad-area laser measurements.<>
Keywords :
semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 0.8 mA; 1.5 micron; 4.1 mA; 90 AA; IR; InP; MOCVD; active region width; atmospheric pressure metalorganic chemical vapor deposition; broad-area laser measurements; buried heterostructure lasers; compressively strained; current blocking layers; high reflectivity mirror coatings; pulsed room-temperature threshold currents; semiconductor growth; strained quaternary quantum wells; uncoated devices; Atmospheric waves; Capacitive sensors; Chemical lasers; Chemical vapor deposition; Coatings; Mirrors; Pulsed laser deposition; Quantum well lasers; Reflectivity; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
