Title :
Very low dark current InGaP/GaAs MSM-photodetector using semi-transparent and opaque contacts
Author :
Matin, M.A. ; Song, K.C. ; Robinson, B.J. ; Simmons, J.G. ; Thompson, D.A. ; Gouin, F.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
fDate :
4/11/1996 12:00:00 AM
Abstract :
Metal-semiconductor-metal (MSM) photodetectors have been fabricated for the first time in the InGaP/GaAs materials system. Extremely low dark currents 86 (±5)pA and 91 (±5)pA were obtained at 5 V bias using opaque and semi-transparent metal (tungsten) contacts, respectively. A front illumination responsivity of 0.37 - 0.65 A/W at 5 V bias is obtained for a 50 μm×50 μm device with 2 μm finger width and 2 μm finger spacing. The devices, operating at 840 nm, have a 3 dB bandwidth of >9.5 GHz for semi-transparent contacts, and 12 GHz with opaque contacts
Keywords :
III-V semiconductors; electrical contacts; gallium arsenide; gallium compounds; indium compounds; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor device metallisation; 12 GHz; 5 V; 840 nm; 86 pA; 9.5 GHz; 91 pA; GaAs; InGaP-GaAs; MSM-photodetector; W; W contacts; W-Au; low dark currents; metal-semiconductor-metal photodetectors; opaque contacts; semi-transparent contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960473
