Very low dark current InGaP/GaAs MSM-photodetector using semi-transparent and opaque contacts

Author

Matin, M.A. ; Song, K.C. ; Robinson, B.J. ; Simmons, J.G. ; Thompson, D.A. ; Gouin, F.

Author_Institution

Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada

Volume

32

Issue

8

fYear

1996

fDate

4/11/1996 12:00:00 AM

Firstpage

766

Lastpage

767

Abstract

Metal-semiconductor-metal (MSM) photodetectors have been fabricated for the first time in the InGaP/GaAs materials system. Extremely low dark currents 86 (±5)pA and 91 (±5)pA were obtained at 5 V bias using opaque and semi-transparent metal (tungsten) contacts, respectively. A front illumination responsivity of 0.37 - 0.65 A/W at 5 V bias is obtained for a 50 μm×50 μm device with 2 μm finger width and 2 μm finger spacing. The devices, operating at 840 nm, have a 3 dB bandwidth of >9.5 GHz for semi-transparent contacts, and 12 GHz with opaque contacts

Keywords

III-V semiconductors; electrical contacts; gallium arsenide; gallium compounds; indium compounds; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor device metallisation; 12 GHz; 5 V; 840 nm; 86 pA; 9.5 GHz; 91 pA; GaAs; InGaP-GaAs; MSM-photodetector; W; W contacts; W-Au; low dark currents; metal-semiconductor-metal photodetectors; opaque contacts; semi-transparent contacts;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19960473

Filename

491080