DocumentCode
827543
Title
A study of the static and multigigabit dynamic effects of gain spectra carrier dependence in semiconductor lasers using a transmission-line laser model
Author
Lowery, Arthur James
Author_Institution
Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
Volume
24
Issue
12
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
2376
Lastpage
2385
Abstract
The addition of carrier diffusion and gain curve peak carrier dependence to the transmission-line laser model allows the study of both the temporal and the spectral effects of this dependence. The model, including a photodiode model, is described and results for a static 860-nm device and an 8-Gb/s bit-sequence-modulated 1550-nm constricted-mesa device compare favorably with the previously obtained numerical, analytical, and experimental data
Keywords
laser theory; semiconductor junction lasers; 8.0 Gbit/s; 860 nm; carrier dependence; carrier diffusion; constricted-mesa device; photodiode model; semiconductor lasers; transmission-line laser model; Equations; Laser modes; Laser noise; Optical design; Optical materials; Optical pulse shaping; Optical scattering; Photodiodes; Semiconductor lasers; Transmission lines;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.14366
Filename
14366
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