Experimental verification of strain benefits in 1.5- mu m semiconductor lasers by carrier lifetime and gain measurements

Author

Zou, Y. ; Osinski, J.S. ; Grodzinski, P. ; Dapkus, P.D. ; Rideout, W. ; Sharfin, W.F. ; Crawford, F.D.

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

4

Issue

12

fYear

1992

Firstpage

1315

Lastpage

1318

Abstract

Recombination processes, gain, and loss have been comparatively studied in both strained and lattice-matched 1.5- mu m semiconductor quantum-well lasers using differential carrier lifetime techniques and other measurements. For the first time, some predicted strain benefits to 1.5- mu m semiconductor lasers have been verified, including (i) the reduction of the Auger recombination rate in devices with both 0.9% and 1.8% compressive strain; and (ii) a 33% reduction of transparency carrier density in lasers with 0.9% strain compared to lattice-matched lasers. The authors, however, did not observe an increase of the differential gain in strained devices as predicted.<>

Keywords

Auger effect; carrier lifetime; optical losses; semiconductor lasers; 1.5 micron; Auger recombination rate; IR; InGaAs; InGaAsP; carrier lifetime; compressive strain; differential carrier lifetime techniques; differential gain; gain measurements; lattice-matched; loss; semiconductor lasers; semiconductor quantum-well lasers; strained QW lasers; transparency carrier density; Capacitive sensors; Charge carrier density; Charge carrier lifetime; Chemical lasers; Gain measurement; Loss measurement; Quantum well lasers; Radiative recombination; Semiconductor lasers; Strain measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.180561

Filename

180561