• DocumentCode
    827556
  • Title

    Potential chirpless DFB laser for InGaAs/InGaAsP compressive-strained quantum wells using modulation doping

  • Author

    Yamanaka, Takayuki ; Yoshikuni, Yuzo ; Lui, Wayne ; Yokoyama, Kiyoyuki ; Seki, Shunji

  • Author_Institution
    NTT Opto-electron. Lab., Kanagawa, Japan
  • Volume
    4
  • Issue
    12
  • fYear
    1992
  • Firstpage
    1318
  • Lastpage
    1321
  • Abstract
    The effects of detuning on the linewidth enhancement factor alpha are theoretically investigated for InGaAs/InGaAsP compressive-strained QW lasers. The relationship among the material gain, the Kramers-Kronig transformed differential gain, and the linewidth enhancement factor is calculated taking into account the effect of compressive strain on the valence subband structure and of p-type modulation doping. It is shown that compressive strain and/or p-type doping significantly reduces the alpha factor. It is also demonstrated that chirpless operation wherein alpha =0 can be achieved in a modulation-doped compressive-strained structure by using detuning.<>
  • Keywords
    III-V semiconductors; Kramers-Kronig relations; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser theory; optical modulation; semiconductor lasers; spectral line breadth; InGaAs-InGaAsP; Kramers-Kronig transformed differential gain; QW lasers; chirpless DFB laser; compressive-strained quantum wells; detuning; laser tuning; linewidth enhancement factor; material gain; modulation doping; p-type modulation doping; semiconductors; valence subband structure; Capacitive sensors; Chirp modulation; Electrons; Epitaxial layers; Indium gallium arsenide; Laser theory; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.180562
  • Filename
    180562