DocumentCode
827556
Title
Potential chirpless DFB laser for InGaAs/InGaAsP compressive-strained quantum wells using modulation doping
Author
Yamanaka, Takayuki ; Yoshikuni, Yuzo ; Lui, Wayne ; Yokoyama, Kiyoyuki ; Seki, Shunji
Author_Institution
NTT Opto-electron. Lab., Kanagawa, Japan
Volume
4
Issue
12
fYear
1992
Firstpage
1318
Lastpage
1321
Abstract
The effects of detuning on the linewidth enhancement factor alpha are theoretically investigated for InGaAs/InGaAsP compressive-strained QW lasers. The relationship among the material gain, the Kramers-Kronig transformed differential gain, and the linewidth enhancement factor is calculated taking into account the effect of compressive strain on the valence subband structure and of p-type modulation doping. It is shown that compressive strain and/or p-type doping significantly reduces the alpha factor. It is also demonstrated that chirpless operation wherein alpha =0 can be achieved in a modulation-doped compressive-strained structure by using detuning.<>
Keywords
III-V semiconductors; Kramers-Kronig relations; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser theory; optical modulation; semiconductor lasers; spectral line breadth; InGaAs-InGaAsP; Kramers-Kronig transformed differential gain; QW lasers; chirpless DFB laser; compressive-strained quantum wells; detuning; laser tuning; linewidth enhancement factor; material gain; modulation doping; p-type modulation doping; semiconductors; valence subband structure; Capacitive sensors; Chirp modulation; Electrons; Epitaxial layers; Indium gallium arsenide; Laser theory; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.180562
Filename
180562
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