Interferometric measurement of the linewidth enhancement factor of a 1.55- mu m strained multiquantum-well InGaAs/InGaAsP amplifier

Author

Ehrhardt, J. ; Villeneuve, A. ; Stegeman, G.I. ; Nakajima, H. ; Landreau, J. ; Ougazzaden, A.

Author_Institution

CREOL, Univ. of Central Florida, Orlando, FL, USA

Volume

4

Issue

12

fYear

1992

Firstpage

1335

Lastpage

1338

Abstract

The linewidth enhancement factor of an InGaAs/InGaAsP strained multiquantum well optical amplifier was measured interferometrically. It varied from 3 to 18 over the wavelength range from 1500 to 1600 nm with injection currents varying from one to four times the lasing threshold of the uncoated device. A rate equation model gave differential gain and refractive index change per carrier, respectively, in the range 0.3 to 2.5*10/sup -15/ cm/sup 2/ and -5 to -8*10/sup -20/ cm/sup 3/.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser variables measurement; light interferometry; refractive index; semiconductor lasers; spectral line breadth; 1.55 micron; 1500 to 1600 nm; IR; InGaAs-InGaAsP; MQW amplifier; carrier; differential gain; injection currents; interferometric measurements; laser diode; lasing threshold; linewidth enhancement factor; optical amplifier; rate equation model; refractive index change; semiconductors; strained multiquantum-well; uncoated device; Differential equations; Indium gallium arsenide; Optical amplifiers; Optical interferometry; Optical refraction; Optical variables control; Refractive index; Semiconductor optical amplifiers; Stimulated emission; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.180568

Filename

180568