Title :
ESD performance evaluation of field oxide lateral NPN transistors
Author_Institution :
SGS-Thomson Microelectron., Crolles, France
fDate :
4/11/1996 12:00:00 AM
Abstract :
The author analyses the ESD performance of two field oxide lateral NPN devices fabricated with classical or specific process steps over-doped p-well (ODPW). It is shown that ODPW devices lead to a higher ESD performance owing to a lower heat dissipation during stress
Keywords :
bipolar transistors; electric breakdown; electrostatic discharge; protection; semiconductor device models; thermal analysis; ESD performance evaluation; ODPW devices; field oxide lateral NPN transistors; heat dissipation reduction; over-doped p-well process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960541
