• DocumentCode
    827727
  • Title

    ESD performance evaluation of field oxide lateral NPN transistors

  • Author

    Nikolaidis, T.

  • Author_Institution
    SGS-Thomson Microelectron., Crolles, France
  • Volume
    32
  • Issue
    8
  • fYear
    1996
  • fDate
    4/11/1996 12:00:00 AM
  • Firstpage
    769
  • Lastpage
    770
  • Abstract
    The author analyses the ESD performance of two field oxide lateral NPN devices fabricated with classical or specific process steps over-doped p-well (ODPW). It is shown that ODPW devices lead to a higher ESD performance owing to a lower heat dissipation during stress
  • Keywords
    bipolar transistors; electric breakdown; electrostatic discharge; protection; semiconductor device models; thermal analysis; ESD performance evaluation; ODPW devices; field oxide lateral NPN transistors; heat dissipation reduction; over-doped p-well process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960541
  • Filename
    491082
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=827727