• DocumentCode
    827789
  • Title

    Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs

  • Author

    Cameron, N.I. ; Murad, S. ; McLelland, H. ; Asenov, A. ; Taylor, M.R.S. ; Holland, M.C. ; Beaumont, S.P.

  • Author_Institution
    Nanoelectron. Res. Centre, Glasgow Univ., UK
  • Volume
    32
  • Issue
    8
  • fYear
    1996
  • fDate
    4/11/1996 12:00:00 AM
  • Firstpage
    770
  • Lastpage
    772
  • Abstract
    The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography. pHEMTs with a transconductance of 600 mS/mm, off state breakdown voltages >2 V, fτ of 120 GHz, f max of 180 GHz and MAG of 13.5 dB at 60 GHz are reported
  • Keywords
    III-V semiconductors; electric breakdown; electron beam lithography; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; sputter etching; 0.12 micron; 120 GHz; 13.5 dB; 180 GHz; 2 V; 60 GHz; 600 mS/mm; In0.30GaAs-GaAs; RIE; electron beam lithography; gate position; gate recess engineering; gate recess width; pseudomorphic HEMT; selective dry etching; source drain gap;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960489
  • Filename
    491083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=827789