Title :
Multi-peak NDR and high PVCR in GaAs/InGaAs/InAs multi-stepped quantum well resonant interband tunnelling diodes
Author :
Yang, Chih-Chin ; Huang, Kuang-Chih ; Su, Yan-Kuin
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fDate :
4/11/1996 12:00:00 AM
Abstract :
The authors report a simple method for decreasing the valley current density and therefore increasing the peak-to-valley current ratio (PVCR) so that it reached 360 at room temperature in GaAs/In0.59Ga0.41As/InAs multi-stepped quantum well resonant interband tunnelling diodes (MSQW RITDs) using a GaAs undoping spacer layer. The PVCR is better data than that of other RITDs, to the knowledge of the authors. Multiple peak resonant tunnelling has been observed in this structure as the undoped GaAs spacer layer is involved
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; negative resistance; resonant tunnelling diodes; semiconductor quantum wells; GaAs undoping spacer layer; GaAs-In0.59Ga0.41As-InAs; MSQW RITD; high PVCR; multi-stepped quantum well RTD; multipeak NDR; resonant interband tunnelling diodes; valley current density reduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960491
