Title :
Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON
Author :
Lee, E.H. ; Bang, Y.C. ; Kang, J.K. ; Keh, Y.C. ; Shin, D.J. ; Lee, J.S. ; Park, S.S. ; Kim, I. ; Lee, J.K. ; Oh, Y.K. ; Jang, D.H.
Author_Institution :
Telecommun. R&D Center, Samsung Electron. Co., Gyeonggi-Do, South Korea
fDate :
3/1/2006 12:00:00 AM
Abstract :
We report a spectrum-sliced amplified spontaneous emission-injected wide-band gain laser covering a temperature range over 110°C as well as entire 32 100-GHz-spaced channels (1533-1558 nm) in 155-Mb/s upstream transmissions over 25 km of single-mode fiber in a wavelength-division-multiplexed passive optical network. The wide-band gain laser diode employs asymmetric multiple quantum-well structure and low antireflection coating in order to widen the gain spectrum.
Keywords :
antireflection coatings; optical communication equipment; optical fibre networks; quantum well lasers; spectral line broadening; superradiance; telecommunication channels; wavelength division multiplexing; 100 GHz; 110 degC; 1533 to 1558 nm; 155 Mbit/s; 25 km; 3200 GHz; 4 to 8 GHz; ASE injection; C-band lasers; WDM-PON; amplified spontaneous emission; gain spectrum widening; low antireflection coating; multiple quantum-well structure; passive optical network; single-mode fiber; spectrum-sliced emission; uncooled lasers; upstream transmissions; wavelength-division-multiplexing; wide-band gain lasers; Bandwidth; Diode lasers; Fiber lasers; Laser transitions; Laser tuning; Quantum well lasers; Semiconductor lasers; Temperature distribution; Wavelength division multiplexing; Wideband; Optical communication; quantum-well (QW) lasers; semiconductor lasers; wavelength-division multiplexing (WDM);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.870115
