Title :
Single crystal silicon thin film transistors fabricated at low process temperatures on glass substrates
Author :
Kouvatsos, D.N. ; Tsoukalas, D. ; Sarcona, G.T. ; Hatalis, M.K. ; Stoemenos, J.
Author_Institution :
Inst. of Microelectron., NCSR Demokritos, Aghia Paraskevi, Greece
fDate :
4/11/1996 12:00:00 AM
Abstract :
Thin film transistors were fabricated in single crystal silicon films bonded to glass substrates. High electron mobilities were achieved, making integration of the driving circuitry and pixel switching elements on the same glass substrate possible and allowing improved display aperture ratios. These single crystal silicon TFTs are attractive for AMLCD applications
Keywords :
MOS integrated circuits; MOSFET; electron mobility; elemental semiconductors; glass; liquid crystal displays; silicon; substrates; thin film transistors; wafer bonding; 600 C; AMLCD applications; Si; active matrix LCD; display aperture ratios; driving circuitry; glass substrates; high electron mobilities; low process temperatures; low temperature processing; pixel switching elements; single crystal Si films; thin film transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960474
