Title :
A nonquasi-static table-based small-signal model of heterojunction bipolar transistor
Author :
Ko, Sangsoo ; Koh, Kyungmin ; Park, Hyun-Min ; Hong, Songcheol
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fDate :
10/1/2002 12:00:00 AM
Abstract :
A nonquasi-static table-based (NQS-TB) small-signal model, which has been used successfully in modeling FETs, is applied to a heterojunction bipolar transistor (HBT). The capacitive couplings associated with base cause the conventional model to be invalid at high frequencies. To take these effects into account, a new model is proposed that is compatible with a small-signal T-model topology. We demonstrate good agreement between the measured and simulated S-parameters over the range of 1-40 GHz.
Keywords :
III-V semiconductors; S-parameters; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; 1 to 40 GHz; HBT; InGaP-GaAs; InGaP/GaAs common-emitter HBT; S-parameters; capacitive couplings; charge-based model; heterojunction bipolar transistor; nonquasistatic table-based small-signal model; small-signal T-model topology; Circuit simulation; Computational modeling; FETs; Frequency; Helium; Heterojunction bipolar transistors; Predictive models; Research and development; Signal design; Topology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.802648
