A nonquasi-static table-based small-signal model of heterojunction bipolar transistor

Author

Ko, Sangsoo ; Koh, Kyungmin ; Park, Hyun-Min ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

49

Issue

10

fYear

2002

fDate

10/1/2002 12:00:00 AM

Firstpage

1681

Lastpage

1686

Abstract

A nonquasi-static table-based (NQS-TB) small-signal model, which has been used successfully in modeling FETs, is applied to a heterojunction bipolar transistor (HBT). The capacitive couplings associated with base cause the conventional model to be invalid at high frequencies. To take these effects into account, a new model is proposed that is compatible with a small-signal T-model topology. We demonstrate good agreement between the measured and simulated S-parameters over the range of 1-40 GHz.

Keywords

III-V semiconductors; S-parameters; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; 1 to 40 GHz; HBT; InGaP-GaAs; InGaP/GaAs common-emitter HBT; S-parameters; capacitive couplings; charge-based model; heterojunction bipolar transistor; nonquasistatic table-based small-signal model; small-signal T-model topology; Circuit simulation; Computational modeling; FETs; Frequency; Helium; Heterojunction bipolar transistors; Predictive models; Research and development; Signal design; Topology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.802648

Filename

1036073