Title :
Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation
Author :
Ueno, Hioraki ; Kitamaru, Daisuke ; Morikawa, Keiichi ; Tanaka, Masayasu ; Miura-Mattausch, Mitiko ; Mattausch, Hans Juergen ; Kumashiro, Shigetaka ; Yamaguchi, Tetsuya ; Yamashita, Kyoji ; Nakayama, Noriaki
Author_Institution :
Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Japan
fDate :
10/1/2002 12:00:00 AM
Abstract :
A new threshold voltage (Vth) model has been developed for the pocket-implant technology. The model extracts the threshold condition from the entire mobile charge concentration in the channel with only five additional parameters; the maximum doping concentration (Nsubp) of the pocket profile, the penetration length (Lp) into the channel, and three enhanced short-channel parameters. The model reproduces the measured Vth versus. gate-length (Lgate) characteristics with an average error of a few millivolts under any bias conditions.
Keywords :
MOSFET; carrier density; circuit simulation; doping profiles; ion implantation; semiconductor device models; surface potential; bias conditions; circuit simulation; enhanced short-channel parameters; impurity-profile-based threshold-voltage model; maximum doping concentration; mobile charge concentration; penetration length; pocket-implanted MOSFETs; reverse-short-channel effect; sheet carrier concentrations; surface potential distribution; threshold condition; Circuit simulation; Doping profiles; Helium; Impurities; MOSFETs; Medical simulation; Region 1; Semiconductor process modeling; Threshold voltage; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.803633
