Revision of the standard hydrodynamic transport model for SOI simulation

Author

Gritsch, Markus ; Kosina, Hans ; Grasser, Tibor ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., Tech. Univ. of Vienna, Austria

Volume

49

Issue

10

fYear

2002

fDate

10/1/2002 12:00:00 AM

Firstpage

1814

Lastpage

1820

Abstract

Anomalous output characteristics are observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not observed in drift-diffusion simulations and its occurrence in measurements is questionable. An explanation of the cause of this effect is given and a solution is proposed by modifying the hydrodynamic transport model.

Keywords

MOSFET; Monte Carlo methods; electron density; semiconductor device models; silicon-on-insulator; Monte-Carlo calculations; anomalous output characteristics; drain current; drift-diffusion simulations; electron concentration; hydrodynamic simulations; hydrodynamic transport model revision; numerical analysis; partially depleted SOI MOSFETs; Analytical models; Computational modeling; Current measurement; Electrons; Equations; High definition video; Hydrodynamics; MOSFETs; Ocean temperature; Spontaneous emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.803645

Filename

1036092