The microthyristor could be a promising microelectronics device

Author

Zekry, Abdelhalim ; Hafez, Ismail Mohammed ; El-Hady, M.M.

Author_Institution

Fac. of Eng., Ain Shams Univ., Cairo, Egypt

Volume

49

Issue

10

fYear

2002

fDate

10/1/2002 12:00:00 AM

Firstpage

1821

Lastpage

1825

Abstract

In this paper, a new microthyristor structure suitable for microelectronics applications has been introduced. A suitable technology for its implementation has been chosen. The microthyristor has been designed and its performance has been simulated. The device showed superior performance concerning the switching times and the power dissipation in addition to controllability of its S-curve. During the development of this work, we introduced some new concepts such as doping-engineered devices, thyristor turn-off by shunting its cathode junction, and power consumption reduction by realizing high resistances. The basic requirements and some conditions are put together for successful launch of the microthyristor in microelectronics.

Keywords

SPICE; isolation technology; semiconductor device models; silicon-on-insulator; thyristors; PSPICE circuit simulator; S-curve controllability; SOI technology; bistable microelectronics device; cathode junction shunting; doping-engineered devices; high resistances; microelectronics applications; microthyristor design; microthyristor structure; performance simulation; power consumption reduction; power dissipation; switching times; thyristor turn-off; trench isolation; CMOS logic circuits; Cathodes; Controllability; Energy consumption; Logic devices; Microelectronics; Power dissipation; Silicon on insulator technology; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.803632

Filename

1036093