Title :
An analysis of the anomalous dip in scattering parameter S22 of InGaP-GaAs heterojunction bipolar transistors (HBTs)
Author :
Tu, Hsing-Yuan ; Lin, Yo-Sheng ; Chen, Ping-Yu ; Lu, Shey-Shi ; Pan, Hsuan-Yu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
10/1/2002 12:00:00 AM
Abstract :
The kink phenomenon in scattering parameter S22 of InGaP-GaAs heterojunction bipolar transistors (HBTs) was explained quantitatively for the first time. Our results show that the output impedance of InGaP-GaAs HBTs can be represented by a simple series resistance-capacitance (R-C) circuit at low frequencies and a simple parallel R-C circuit at high frequencies very accurately because of the high output resistance of HBTs. The behavior of S22 of HBTs is in contrast with that of field effect transistors (FETs), where the smaller drain-source output resistance Rds obscures the ambivalent characteristics.
Keywords :
III-V semiconductors; RC circuits; S-parameters; circuit feedback; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; 100 MHz to 20 GHz; InGaP-GaAs; InGaP-GaAs HBTs; ambivalent characteristics; anomalous dip; drain-source output resistance; dual-feedback circuit methodology; heterojunction bipolar transistors; high output resistance; hybrid π model; kink phenomenon; output impedance; parallel R-C circuit; scattering parameter S22; series resistance-capacitance circuit; Circuit analysis; Electrical resistance measurement; Electronics packaging; FETs; Feedback circuits; Frequency; Heterojunction bipolar transistors; Impedance; Scattering parameters; VHF circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.802658
