• DocumentCode
    828494
  • Title

    Comments on "Inversion charge modeling"

  • Author

    Galup-Montoro, Carlos ; Schneider, Márcio C. ; Cunha, Ana I A

  • Volume
    49
  • Issue
    10
  • fYear
    2002
  • Firstpage
    1842
  • Lastpage
    1843
  • Abstract
    For original paper see H.K. Gummel and K. Singhal, ibid., vol.48, p.1585-93 (2001). In the original paper, an implicit relationship for the inversion charge density in the channel of MOS transistors is presented. As an application, the deduction of a compact MOS transistor model is outlined. This correspondence compares some results of this paper with previous relevant publications.
  • Keywords
    MOSFET; semiconductor device models; MOS transistor channel; MOSFET; compact MOS transistor model; drain current; inversion charge density; MOSFETs; Semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.803789
  • Filename
    1036100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=828494