A latch phenomenon in buried N-body SOI NMOSFET´s

Author

Gautier, J. ; Auberton-Herve, A.-J.

Author_Institution

LETI-CENG, Grenoble, France

Volume

12

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

372

Lastpage

374

Abstract

The authors show that a snapback effect resulting in a latching can exist in a buried N-body NMOS device on silicon-on-insulator (SOI). Using numerical simulations, it is demonstrated that when V/sub GS/ is less than the flat-band voltage and after triggering, this kind of device behaves as a floating-base n-p-n bipolar transistor, the base hole density of which is controlled by an inversion layer instead of the usual base doping. The latch phenomenon results from the combination of this parasitic quasi-bipolar device, a back surface NMOS transistor, and impact ionization current.<>

Keywords

impact ionisation; insulated gate field effect transistors; semiconductor-insulator boundaries; SOI NMOSFET; Si; back surface NMOS transistor; base hole density; buried N-body NMOS device; floating-base n-p-n bipolar transistor; impact ionization current; inversion layer; latch phenomenon; n-channel MOSFET; numerical simulations; parasitic quasi-bipolar device; snapback effect; Bipolar transistors; Doping; Feedback; Impact ionization; MOS devices; MOSFET circuits; Numerical simulation; Semiconductor films; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.103611

Filename

103611