Title :
A new technique for measuring lateral distribution of oxide charge and interface traps near MOSFET junctions
Author :
Chen, Wenliang ; Ma, Tso-Ping
Author_Institution :
Yale Univ., New Haven, CT, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
A technique to measure the lateral distribution of both interface traps and trapped oxide charge near the source-drain junctions in MOSFETs is presented. Its basic principle is described. This technique derives from the charge-pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Examples are shown for hot-carrier stressed MOS transistors.<>
Keywords :
electron traps; hole traps; insulated gate field effect transistors; interface electron states; semiconductor device testing; MOSFET junctions; charge-pumping method; hot-carrier stressed MOS transistors; interface traps; lateral distribution; source-drain junctions; trapped oxide charge; Channel bank filters; Charge measurement; Charge pumps; Current measurement; Equations; Frequency; Hot carriers; MOSFET circuits; Stress measurement; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
