DocumentCode
828607
Title
A new technique for measuring lateral distribution of oxide charge and interface traps near MOSFET junctions
Author
Chen, Wenliang ; Ma, Tso-Ping
Author_Institution
Yale Univ., New Haven, CT, USA
Volume
12
Issue
7
fYear
1991
fDate
7/1/1991 12:00:00 AM
Firstpage
393
Lastpage
395
Abstract
A technique to measure the lateral distribution of both interface traps and trapped oxide charge near the source-drain junctions in MOSFETs is presented. Its basic principle is described. This technique derives from the charge-pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Examples are shown for hot-carrier stressed MOS transistors.<>
Keywords
electron traps; hole traps; insulated gate field effect transistors; interface electron states; semiconductor device testing; MOSFET junctions; charge-pumping method; hot-carrier stressed MOS transistors; interface traps; lateral distribution; source-drain junctions; trapped oxide charge; Channel bank filters; Charge measurement; Charge pumps; Current measurement; Equations; Frequency; Hot carriers; MOSFET circuits; Stress measurement; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.103618
Filename
103618
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