• DocumentCode
    828801
  • Title

    Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs

  • Author

    Makon, R.E. ; Lang, M. ; Driad, R. ; Schneider, K. ; Ludwig, M. ; Aidam, R. ; Quay, R. ; Schlechtweg, M. ; Weimann, G.

  • Author_Institution
    Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
  • Volume
    41
  • Issue
    11
  • fYear
    2005
  • fDate
    5/26/2005 12:00:00 AM
  • Firstpage
    644
  • Lastpage
    646
  • Abstract
    A 2:1 multiplexer (MUX) and low power selector ICs have been successfully designed and manufactured using an InP/InGaAs DHBT technology. The 2:1 MUX has been tested at data rates up to 80 Gbit/s with an output swing of 600 mV, while the selector IC has achieved operation speed up to 90 Gbit/s at a power consumption of only 385 mW.
  • Keywords
    III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; multiplexing equipment; 2:1 MUX; 2:1 multiplexer; 385 mW; 600 mV; 80 Gbit/s; 90 Gbit/s; DHBT technology; InP-InGaAs; low power selector IC;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20050301
  • Filename
    1437874