Title :
AlGaAs and GaAsP high-power ultrafast p+-n-n+ diodes based on heterojunctions and a graded-gap base
Author :
Ashkinazi, German A. ; Leibovitch, Marc G. ; Nathan, Menachem
Author_Institution :
Dept. of Electr. Eng.-Phys. Electron., Tel Aviv Univ., Israel
fDate :
2/1/1993 12:00:00 AM
Abstract :
The authors present a theoretical model of power p+-n-n + diodes with a graded-gap base and either homojunctions (GB) or heterojunctions (HGB), and numerical calculations of static and dynamic characteristics of AlGaAs (GaAsP) based structures. It is shown that HGB diodes will exhibit characteristics and properties significantly better than those of simple (homojunctions plus uniform base) GaAs and Si diodes. For example, the forward voltage drop in a high-voltage (W/Lp=13) high-frequency (trr=25 ns) HGB diode will be 50% and 300% smaller than the drop in, respectively, simple GaAs and Si diodes with the same W/Lp and trr. Other significant projected improvements include operation up to 450°C, an order of magnitude reduction in the reverse current, and a 50% increase in the breakdown voltage
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; power electronics; semiconductor device models; semiconductor diodes; AlGaAs; GaAsP; breakdown voltage; dynamic characteristics; forward voltage drop; graded-gap base; heterojunctions; high frequency HGB diode; high-power ultrafast p+-n-n+ diodes; model; numerical calculations; power electronic devices; reverse current; reverse recovery; static characteristics; Current density; Electrons; Gallium arsenide; Heterojunctions; P-i-n diodes; Photonic band gap; Radiative recombination; Semiconductor diodes; Spontaneous emission; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
