DocumentCode :
828957
Title :
Transfers of 2-inch GaN films onto sapphire substrates using Smart CutTM technology
Author :
Tauzin, A. ; Akatsu, T. ; Rabarot, M. ; Dechamp, J. ; Zussy, M. ; Moriceau, H. ; Michaud, J.F. ; Charvet, A.-M. ; Cioccio, L. Di ; Fournel, F. ; Garrione, J. ; Faure, B. ; Letertre, F. ; Kernevez, N.
Author_Institution :
Dept. de Recherches sur la Fussion Controlee, CEA, Centre d´´Etudes de Grenoble, France
Volume :
41
Issue :
11
fYear :
2005
fDate :
5/26/2005 12:00:00 AM
Firstpage :
668
Lastpage :
670
Abstract :
For the first time, transfers of thin GaN films by means of the Smart Cut technology were demonstrated. Full wafer transfer of a 2-inch GaN layer from its original substrate onto a carrier sapphire wafer is reported.
Keywords :
III-V semiconductors; gallium compounds; sapphire; semiconductor thin films; substrates; wide band gap semiconductors; 2 inch; Al2O3; GaN; Smart Cut technology; carrier sapphire wafer; sapphire substrates; thin films; wafer transfer;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20051038
Filename :
1437890
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=828957
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