Title :
The influence of nonuniform doping profile on I-V characteristics of MOS transistors
Author :
Lukasiak, Lidia ; Jakubowski, Andrzej
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
fDate :
2/1/1993 12:00:00 AM
Abstract :
The influence of nonuniform doping on I-V characteristics of a MOS transistor is estimated. A modification of the Pao-Sah model (1966) is presented, which extends its validity on a box doping profile
Keywords :
doping profiles; insulated gate field effect transistors; semiconductor device models; I-V characteristics; MOS transistors; Pao-Sah model; box doping profile; nonuniform doping profile; Capacitance; Doping profiles; Electrons; Electrostatics; MOSFET circuits; Microelectronics; Quasi-doping; Semiconductor process modeling; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
