• DocumentCode
    829209
  • Title

    The influence of nonuniform doping profile on I-V characteristics of MOS transistors

  • Author

    Lukasiak, Lidia ; Jakubowski, Andrzej

  • Author_Institution
    Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
  • Volume
    40
  • Issue
    2
  • fYear
    1993
  • fDate
    2/1/1993 12:00:00 AM
  • Firstpage
    453
  • Lastpage
    455
  • Abstract
    The influence of nonuniform doping on I-V characteristics of a MOS transistor is estimated. A modification of the Pao-Sah model (1966) is presented, which extends its validity on a box doping profile
  • Keywords
    doping profiles; insulated gate field effect transistors; semiconductor device models; I-V characteristics; MOS transistors; Pao-Sah model; box doping profile; nonuniform doping profile; Capacitance; Doping profiles; Electrons; Electrostatics; MOSFET circuits; Microelectronics; Quasi-doping; Semiconductor process modeling; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.182527
  • Filename
    182527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=829209