• DocumentCode
    829217
  • Title

    Hydrodynamic and Monte Carlo simulation of an electron shock wave in a 1-μm n+-n-n+ diode

  • Author

    Gardner, Carl L.

  • Author_Institution
    Dept. of Comput. Sci., Duke Univ., Durham, NC, USA
  • Volume
    40
  • Issue
    2
  • fYear
    1993
  • fDate
    2/1/1993 12:00:00 AM
  • Firstpage
    455
  • Lastpage
    457
  • Abstract
    Hydrodynamic model simulations of a steady-state electron shock wave in a 1-μm Si semiconductor device at 77 K are compared with a Monte Carlo simulation of the Boltzmann equation using the DAMOCLES program. Excellent agreement between the two different methods for simulating the electron shock wave can be obtained by adjusting the amount of heat conduction in the hydrodynamic model
  • Keywords
    Boltzmann equation; Monte Carlo methods; semiconductor device models; semiconductor diodes; shock waves; 1 micron; 77 K; Boltzmann equation; DAMOCLES program; Monte Carlo simulation; Si semiconductor device; electron shock wave; electron velocity; heat conduction; hydrodynamic model; n+-n-n+ diode; Boltzmann equation; Doping; Electric shock; Electrons; Hydrodynamics; Monte Carlo methods; Semiconductor devices; Semiconductor diodes; Shock waves; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.182528
  • Filename
    182528
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=829217