Current-drive enhancement limited by carrier velocity saturation in deep-submicrometer fully depleted SOI MOSFETs

Author

Fossum, J.G. ; Krishnan, S.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

40

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

457

Lastpage

459

Abstract

Simulations and measurements of SOI MOSFETs are presented with analytical insight to reveal the severe limitation of current-drive enhancement caused by carrier velocity saturation in the deep-submicrometer fully depleted device. For L=0.1 μm, the enhancement, which tends to result from the suppressed body charge and electric field in the thin-film device, is virtually negated by the velocity saturation driven by the high longitudinal electric field

Keywords

SPICE; carrier mobility; high field effects; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; 0.1 micron; I-V characteristics; SOI MOSFETs; SOISPICE-1; carrier velocity saturation; current-drive enhancement; deep-submicrometer fully depleted device; high longitudinal electric field; saturated drain current; simulation; suppressed body charge; thin-film device; Current measurement; Doping; Electron mobility; MOSFET circuits; Semiconductor device modeling; Thin film devices; Transconductance; Ultra large scale integration; Velocity measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.182529

Filename

182529