DocumentCode
829299
Title
Thin film polycrystalline silicon solar cell on ceramics with a seeding layer formed via aluminium-induced crystallisation of amorphous silicon
Author
Ornaghi, C. ; Stöger, M. ; Beaucarne, G. ; Poortmans, J. ; Schattschneider, P.
Author_Institution
IMEC, Leuven, Belgium
Volume
150
Issue
4
fYear
2003
Abstract
Thin film polycrystalline silicon solar cells on foreign substrates are viewed as one of the most promising approaches to cost reduction in photovoltaics. To enhance the quality of the film, the use of ´seeding layers´ prior to deposition of active material is being investigated. It has been shown that a phenomenon suitable to create such a seeding layer is the aluminium-induced crystallisation of amorphous silicon. Previous work mainly considered glass as the substrate of choice, thereby introducing limitations on the deposition temperature. Results concerning the application of such a technique to ceramic substrates (allowing the use of high-temperature CVD) are described. Also, the first reported results of a solar cell made in silicon deposited on these seeding layers are presented
Keywords
aluminium <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; amorphous semiconductors <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; ceramics <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; chemical vapour deposition <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; crystallisation <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; elemental semiconductors <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; semiconductor growth <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; semiconductor thin films <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; silicon <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; solar cells <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; substrates <thin film polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; thin film devices <polycryst. Si solar cell, ceramics, seeding layer form. via Al-induced crystallisation of amorph. Si>; Al; Al-induced crystallisation; Si; amorphous Si; ceramic substrates; high-temperature CVD; seeding layer; thin film polycrystalline Si solar cell;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:20030630
Filename
1245968
Link To Document