Fabrication of high quality Nb/AlO/sub /x-Al/Nb Josephson junctions. III. Annealing stability of AlO/sub /x tunneling barriers

Author

Shiota, T. ; Imamura, T. ; Hasuo, S.

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

Volume

2

Issue

4

fYear

1992

Firstpage

222

Lastpage

227

Abstract

For pt.II see ibid., vol.2, p.84 (1992). Changes in current-voltage characteristics of Nb/AlO/sub /x-Al/Nb Josephson junctions due to annealing are studied. The surface of the Nb counterelectrode was plasma-nitrided to clarify the effects of oxygen diffusing from it. From anodization profiles, it was confirmed that surface nitridation protects the tunneling barrier from oxygen diffusion. Surface nitridation improved the junction stability for long annealing. The decrease in critical current at initial annealing was found to be independent of nitridation. The annealing stability of AlN/sub /x barrier junctions, compared to that of AlO/sub /x barrier junctions, was measured, and it was concluded that the decrease at initial annealing is due to changes in the AlO/sub /x barrier itself.<>

Keywords

Josephson effect; aluminium; aluminium compounds; annealing; anodisation; critical currents; niobium; superconducting junction devices; surface hardening; Josephson junctions; Nb-AlO/sub x/-Al-Nb junctions; Nb/AlO/sub x/-Al/Nb; annealing stability; anodization profiles; critical current; current-voltage characteristics; diffusion protection; fabrication; plasma-nitrided; Annealing; Critical current; Current-voltage characteristics; Fabrication; Josephson junctions; Niobium; Plasma properties; Plasma stability; Protection; Tunneling;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.182734

Filename

182734