DocumentCode
830232
Title
Overview on electrostatic discharge protection designs for mixed-voltage I/O interfaces: design concept and circuit implementations
Author
Ker, Ming-Dou ; Lin, Kun-Hsien
Author_Institution
Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Volume
53
Issue
2
fYear
2006
Firstpage
235
Lastpage
246
Abstract
Electrostatic discharge (ESD) protection design for mixed-voltage I/O interfaces has been one of the key challenges of system-on-a-chip (SOC) implementation in nano-scale CMOS processes. The on-chip ESD protection circuit for mixed-voltage I/O interfaces should meet the gate-oxide reliability constraints and prevent the undesired leakage current paths. This paper presents an overview on the design concept and circuit implementations of the ESD protection designs for mixed-voltage I/O interfaces without using the additional thick gate-oxide process. The ESD design constraints in mixed-voltage I/O interfaces, the classification and analysis of ESD protection designs for mixed-voltage I/O interfaces, and the designs of high-voltage-tolerant power-rail ESD clamp circuit are presented and discussed.
Keywords
CMOS integrated circuits; electrostatic discharge; integrated circuit design; nanoelectronics; system-on-chip; voltage regulators; SOC implementation; electrostatic discharge protection; gate-oxide reliability; leakage current paths; mixed-voltage I/O interfaces; nanoscale CMOS process; on-chip ESD protection circuit; power-rail ESD clamp circuit; system-on-a-chip; thick gate-oxide process; CMOS process; CMOS technology; Circuits; Electrostatic discharge; Leakage current; MOS devices; Microelectronics; Power supplies; Protection; Voltage; ESD protection design; Electrostatic discharge (ESD); gate-oxide reliability; high-voltage tolerant; mixed-voltage I/O interfaces; power-rail ESD clamp circuit;
fLanguage
English
Journal_Title
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher
ieee
ISSN
1549-8328
Type
jour
DOI
10.1109/TCSI.2005.856040
Filename
1593930
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