• DocumentCode
    830476
  • Title

    Zero-bias modulation of tensile-strained InGaAs/InGaAsP quantum well lasers with wide phase margins

  • Author

    Nobuhara, H. ; Nakajima, Kensuke ; Tanaka, Kiyoshi ; Odagawa, T. ; Fujii, Teruya ; Wakao, K.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    138
  • Lastpage
    139
  • Abstract
    1 Gbit/s, zero-bias modulation with wide phase margins was achieved over a 20-100 degrees C temperature range with a tensile-strained InGaAs/InGaAsP quantum well laser emitting at a wavelength of 1.5 mu m.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor lasers; 1 Gbit/s; 1.5 micron; 20 to 100 degC; InGaAs-InGaAsP; temperature range; tensile strained quantum well laser; wide phase margins; zero-bias modulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930093
  • Filename
    184542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=830476