Title :
Pressure Contact Semiconductor Devices
Author :
Warburton, William ; Lootens, William F. ; Staviski, Theodore
Author_Institution :
General Electric Company
Abstract :
The pressure contact semiconductor device features a subassembly consisting of a silicon pellet and two attached tungsten backup plates contained in a disk-shaped ceramic insulated housing, but not soldered down to either top or bottom contacts in the housing. The devices discussed in the paper are two SCRs rated at 230 amperes average, 1300 volts, and 110 amperes average, 1300 volts, and a rectifier diode rated at 400 amperes average, 1200 volts. Devices with other ratings and characteristics are planned for the same type of construction.
Keywords :
Contacts; Cooling; Copper; Heat sinks; Rectifiers; Semiconductor devices; Semiconductor diodes; Thermal resistance; Thyristors; Tungsten;
Journal_Title :
Industry and General Applications, IEEE Transactions on
DOI :
10.1109/TIGA.1966.4180717
