• DocumentCode
    830487
  • Title

    Erbium-doped phosphosilicate glass waveguide amplifier fabricated by PECVD

  • Author

    Shuto, Kazuo ; Hattori, K. ; Kitagawa, Tomotaka ; Ohmori, Yutaka ; Horiguchi, M.

  • Author_Institution
    NTT Opto-Electron. Labs., Ibaraki, Japan
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    139
  • Lastpage
    141
  • Abstract
    An Er-doped waveguide amplifier fabricated by plasma enhanced chemical vapour deposition is described. A maximum net gain of 5 dB and a gain coefficient of 0.67 dB/cm are obtained in a 0.48 wt.% Er-doped waveguide pumped at 420 mW at a wavelength of 0.98 mu m. The 0 dB gain threshold is 23 mW.
  • Keywords
    erbium; integrated optics; optical waveguides; phosphosilicate glasses; plasma CVD; solid lasers; 0.98 micron; 420 mW; 5 dB; Er-doped waveguide amplifier; P2O5-SiO2:Er; PSG:Er; gain coefficient; gain threshold; maximum net gain; phosphosilicate glass; plasma enhanced chemical vapour deposition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930094
  • Filename
    184543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=830487