Title :
High-power 1.02 mu m InGaAs/AlGaAs strained quantum well lasers with GaInP buried waveguides for pumping Pr3+-doped optical fibre amplifier
Author :
Fukagai, K. ; Ishikawa, Seiichiro ; Fujii, Hiromitsu ; Endo, Kazuhiro
Author_Institution :
NEC Corp., Ibaraki, Japan
Abstract :
High power 1.02 mu m single spatial mode laser diodes with low-loss (3.3 cm-1) GaInP buried waveguides have been developed for pumping Pr3+-doped optical fibre amplifiers. A maximum CW light output power of 415 mW and an optical fibre output of 71 mW at 200 mA have been achieved. A preliminary lifetest showed stable operation for over 2300 h under 100 mW CW conditions at 50 degrees C.
Keywords :
III-V semiconductors; aluminium compounds; fibre lasers; gallium arsenide; indium compounds; life testing; optical pumping; optical waveguides; praseodymium; semiconductor device testing; semiconductor lasers; 1.02 micron; 100 mW; 200 mA; 2300 h; 415 mW; 50 degC; 71 mW; CW light output power; GaInP buried waveguides; InGaAs-AlGaAs strained quantum well lasers; Pr 3+-doped optical fibre amplifiers; lifetest; optical fibre output; pumping; single spatial mode laser diodes; stable operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930098
