Title :
230 fs, 25 W pulses from conventional mode-locked laser diodes with saturable absorber created by ion implantation
Author :
Stelmakh, N. ; Lourtioz, J.-M.
Author_Institution :
Paris Univ., France
Abstract :
230 fs, 25 W pulses are obtained from conventional mode-locked AlGaAs laser diodes with highly-reflecting external cavities. Uncoated commercial diodes are used with a region of saturable absorption created by ion implantation. The overall pulse performances are believed to be among the best reported from simple electrically-pumped laser diodes without using additional amplifier sections.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; laser mode locking; optical saturable absorption; semiconductor lasers; 230 fs; 25 W; AlGaAs laser diodes; electrically-pumped laser diodes; highly-reflecting external cavities; ion implantation; mode-locked laser diodes; pulse performances; saturable absorber;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930108
