DocumentCode
830649
Title
230 fs, 25 W pulses from conventional mode-locked laser diodes with saturable absorber created by ion implantation
Author
Stelmakh, N. ; Lourtioz, J.-M.
Author_Institution
Paris Univ., France
Volume
29
Issue
2
fYear
1993
Firstpage
160
Lastpage
162
Abstract
230 fs, 25 W pulses are obtained from conventional mode-locked AlGaAs laser diodes with highly-reflecting external cavities. Uncoated commercial diodes are used with a region of saturable absorption created by ion implantation. The overall pulse performances are believed to be among the best reported from simple electrically-pumped laser diodes without using additional amplifier sections.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; laser mode locking; optical saturable absorption; semiconductor lasers; 230 fs; 25 W; AlGaAs laser diodes; electrically-pumped laser diodes; highly-reflecting external cavities; ion implantation; mode-locked laser diodes; pulse performances; saturable absorber;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930108
Filename
184557
Link To Document