Title :
Fabrication of GaAs quantum wire structure using metal organic molecular beam epitaxy
Author :
Nomura, Yutaka ; Morishita, Yu ; Goto, Satoshi ; Katayama, Yasunao
Author_Institution :
Optoelectron. Technol. Res. Lab., Ibaraki, Japan
Abstract :
GaAs quantum wires (100*20 nm2) buried in AlAs layers have been successfully fabricated using metal organic molecular beam epitaxy (MOMBE) for the first time. The underlying growth mechanism is that, under appropriate As4 pressure in MOMBE, GaAs preferentially grows only on the sidewalls of the patterned
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; semiconductor growth; semiconductor quantum wires; GaAs-AlAs; MOMBE; growth mechanism; metal organic molecular beam epitaxy; patterned GaAs substrate; preferential growth; quantum wire structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930110
