Title :
Fabrication and characteristics of improved strained quantum-well GaInAlAs gain-coupled DFB lasers
Author :
Borchert, Bernd ; Gessner, R.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
Results of improved 1.58 mu m GaInAlAs strained quantum-well gain-coupled DFB lasers are presented. Besides the excellent spectral properties (singlemode yield of 75% and a sidemode suppression ratio of 45 dB), 20 mW output power and CW operation at 80 degrees C have been obtained. A record 3 dB bandwidth of 11 GHz was measured. Spectral or dynamical instabilities due to the loss grating have not been observed.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor quantum wells; 1.58 micron; 11 GHz; 20 mW; 3 dB bandwidth; 80 degC; CW operation; GaInAlAs; gain-coupled DFB lasers; output power; sidemode suppression ratio; singlemode yield; spectral properties; strained quantum-well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930141
