• DocumentCode
    830980
  • Title

    Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infrared photodetector

  • Author

    Zhang, Ye ; Baruch, N. ; Wang, W.I.

  • Author_Institution
    Limerick Univ., Ireland
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    213
  • Lastpage
    214
  • Abstract
    The Letter demonstrates a long-wavelength broadband normal incidence infrared photodetector based on bound state to extended state interconduction sub-band transitions in AlAs/AlGaAs X-valley quantum wells. High infrared absorption coefficient and quantum efficiency ( alpha =1900 cm-1, eta =19%), wideband long wavelength photoresponsivity ( lambda =7.8-17.1 mu m) and low dark current (ID=10-6 A at 68 K and Vb=1 V) are achieved.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; semiconductor quantum wells; AlAs-AlGaAs; X-valley quantum wells; bound state; dark current; extended state interconduction sub-band transitions; infrared absorption coefficient; infrared photodetector; long wavelength photoresponsivity; normal incidence; quantum efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930143
  • Filename
    184591
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=830980