DocumentCode :
831032
Title :
4.5 W CW, near-diffraction-limited tapered-stripe semiconductor optical amplifier
Author :
Mehuys, D. ; Goldberg, L. ; Waarts, R. ; Welch, D.F.
Author_Institution :
Spectra Diode Lab., San Jose, CA, USA
Volume :
29
Issue :
2
fYear :
1993
Firstpage :
219
Lastpage :
221
Abstract :
A 1.5 mm-long semiconductor amplifier injected with 150 mW from a discrete master oscillator emitted up to 4.5 W CW in a near-diffraction-limited beam at 860 nm.
Keywords :
integrated optoelectronics; semiconductor lasers; semiconductor quantum wells; 4.5 W; 860 nm; discrete master oscillator; near-diffraction-limited beam; tapered-stripe semiconductor optical amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930150
Filename :
184596
Link To Document :
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