Title :
Radiation Hardening of CMOS Technologies - AN Overview
Author_Institution :
RCA Corporation Solid State Technology Center Somerville, New Jersey 08876
Abstract :
The current status of four technologies for manufacturing radiation-hardened complementary metal-oxide-semiconductor integrated circuits is presented. The technologies include both aluminum-gate and silicon-gate CMOS structures formed on bulk-silicon and on silicon-on-sapphire (SOS) substrates. The hardness levels achieved on large-scale integrated circuits fabricated in each of these technologies is given. In addition some historical background is included.
Keywords :
CMOS technology; Energy consumption; Integrated circuit technology; Large scale integration; Leakage current; MOSFETs; Radiation hardening; Silicon; Substrates; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1977.4329161
