Title :
Establishment of a Radiation Hardened CMOS Manufacturing Process
Author :
London, A. ; Matteucci, D.A. ; Wang, R.C.
Author_Institution :
National Semiconductor Corporation Santa Clara, Calfiornia
Abstract :
A radiation hardened metal gate CMOS IC process, tolerant to doses in excess of 106 rads (Si), has been established by making necessary modifications to a standard process. These modifications are described, a definition of circuit radiation hardness is discussed, and typical electrical performance characteristics as a function of radiation dose are presented. Procedures are described for assuring the hardness of finished product. Operating life test data indicates that the process is inherently reliable.
Keywords :
CMOS integrated circuits; CMOS process; Circuit testing; Ionizing radiation; Life testing; MOS devices; Manufacturing processes; Oxidation; Radiation hardening; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1977.4329164
