Title :
Low noise near infrared detection system using InGaAs pin photodiode
Author :
Mizumoto, Ikuro ; Mashiko, S.
Author_Institution :
Tohoku Univ., Sendai, Japan
Abstract :
A low noise detection system using a pin photodiode for near infrared spectroscopic measurement was developed. The InGaAs pin photodiode is more suitable than the Ge pin photodiode for detecting low level light as regards dark current and quantum efficiency. The detection system consists of an InGaAs pin photodiode with a charge integrating amplifier (InGaAs-CIA) operated at 77 K. The minimum detectable power of 10-16 W was achieved at 1.28 mu m wavelength.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; p-i-n photodiodes; 1.28 micron; 10 -16 W; 77 K; InGaAs; charge integrating amplifier; dark current; low level light; low noise detection system; minimum detectable power; near infrared detection system; p-i-n photodiode; quantum efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930161
