Title :
Hardness Assurance Implications of Variables in Junction Burnout
Author :
van Lint, V.A.J. ; Leadon, R.E.
Author_Institution :
Mission Research Corporation La Jolla, California 92037
Abstract :
The electrical energy to cause junction damage varies between device types and between units of a single type. Thermal diffusion models are used to establish the dependence of damage energy on device parameters, taking into account factors that stabilize and destabilize the current density profile. Candidate hardness assurance screens can be deduced from the results.
Keywords :
Breakdown voltage; Control systems; Current density; Electric breakdown; Scattering; Semiconductor devices; Silicon; Space vector pulse width modulation; Temperature; Thermal factors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1977.4329169