DocumentCode :
831138
Title :
Hardness Assurance Implications of Variables in Junction Burnout
Author :
van Lint, V.A.J. ; Leadon, R.E.
Author_Institution :
Mission Research Corporation La Jolla, California 92037
Volume :
24
Issue :
6
fYear :
1977
Firstpage :
2084
Lastpage :
2087
Abstract :
The electrical energy to cause junction damage varies between device types and between units of a single type. Thermal diffusion models are used to establish the dependence of damage energy on device parameters, taking into account factors that stabilize and destabilize the current density profile. Candidate hardness assurance screens can be deduced from the results.
Keywords :
Breakdown voltage; Control systems; Current density; Electric breakdown; Scattering; Semiconductor devices; Silicon; Space vector pulse width modulation; Temperature; Thermal factors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1977.4329169
Filename :
4329169
Link To Document :
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