DocumentCode :
831160
Title :
High speed quantum-well lasers and carrier transport effects
Author :
Nagarajan, Radhakrishnan ; Ishikawa, Masayuki ; Fukushima, Toru ; Geels, Randall S. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
28
Issue :
10
fYear :
1992
fDate :
10/1/1992 12:00:00 AM
Firstpage :
1990
Lastpage :
2008
Abstract :
Carrier transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include these effects. They show theoretically and experimentally that carrier transport can lead to significant low-frequency parasitic-like rolloff that reduces the modulation response by as much as a factor of six in quantum-well lasers. They also show that, in addition, it leads to a reduction in the effective differential gain and thus the resonance frequency, while the nonlinear gain compression factor remains largely unaffected by it. The authors present the temperature dependence data for the K factor as further evidence for the effects of carrier transport
Keywords :
semiconductor lasers; semiconductor quantum wells; K factor; analytical expressions; carrier transport effects; damping rate; effective differential gain; high-speed properties; low-frequency parasitic-like rolloff; model; modulation response; nonlinear gain compression factor; quantum-well lasers; resonance frequency; temperature dependence data; Bandwidth; Charge carrier density; Damping; Differential equations; Laser modes; Laser noise; Quantum well lasers; Resonance; Resonant frequency; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.159508
Filename :
159508
Link To Document :
بازگشت