Title :
Wafer-scale uniformity of vertical-cavity lasers grown by modified phase-locked epitaxy technique
Author :
Walker, J.D. ; Kuchta, D.M. ; Smith, Jeffrey S.
Author_Institution :
California Univ., Berkeley, CA, USA
Abstract :
By using discrete 180 degrees substrate rotations during phase-locked growth of vertical-cavity laser diodes, 1.5% uniformity of lasing wavelength has been achieved over a 50 mm wafer. For 30*30 mu m2 devices, the threshold current distribution is 18+or-4 mA, and the peak CW power distribution is 5+or-3 mW.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; 18 mA; 5 mW; Al 0.67Ga 0.33As-In 0.2Ga 0.8As-GaAs; MBE; VCSEL; discrete 180 degrees substrate rotations; laser diodes; peak CW power distribution; phase-locked epitaxy; threshold current distribution; vertical-cavity lasers; wafer scale uniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930164
