• DocumentCode
    831168
  • Title

    Wafer-scale uniformity of vertical-cavity lasers grown by modified phase-locked epitaxy technique

  • Author

    Walker, J.D. ; Kuchta, D.M. ; Smith, Jeffrey S.

  • Author_Institution
    California Univ., Berkeley, CA, USA
  • Volume
    29
  • Issue
    2
  • fYear
    1993
  • Firstpage
    239
  • Lastpage
    240
  • Abstract
    By using discrete 180 degrees substrate rotations during phase-locked growth of vertical-cavity laser diodes, 1.5% uniformity of lasing wavelength has been achieved over a 50 mm wafer. For 30*30 mu m2 devices, the threshold current distribution is 18+or-4 mA, and the peak CW power distribution is 5+or-3 mW.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; 18 mA; 5 mW; Al 0.67Ga 0.33As-In 0.2Ga 0.8As-GaAs; MBE; VCSEL; discrete 180 degrees substrate rotations; laser diodes; peak CW power distribution; phase-locked epitaxy; threshold current distribution; vertical-cavity lasers; wafer scale uniformity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930164
  • Filename
    184609
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=831168