Title :
Improved negative dynamic resistance model for high voltage MOSFETs
Author :
Van Calster, A. ; Witters, J.
Abstract :
For MOSFETs operating at moderate and higher power levels a negative dynamic resistance is observed. An electrothermal model based on the temperature dependence of the mobility and the velocity saturation is proposed.
Keywords :
insulated gate field effect transistors; negative resistance; power transistors; semiconductor device models; MOSFETs; electrothermal model; negative dynamic resistance model; power levels; temperature dependence; velocity saturation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930142
