Computer Aided Analysis of Radiation Hardened CMOS MSI/LSI Designs

Computer-aided circuit analysis techniques are utilized to predict the performance of individual CMOS cells and combinations of such cells which might be found in medium scale integrated circuits. The predictions include statistical variations, thermal effects, loading effects, and radiation effects including variations due to applied bias. Experimental data from tests conducted on devices from a special test wafer are compared to the predictions to provide verification of results.