DocumentCode
83150
Title
A Popularity-Aware Buffer Management to Improve Buffer Hit Ratio and Write Sequentiality for Solid-State Drive
Author
Qingsong Wei ; Lingfang Zeng ; Jianxi Chen ; Cheng Chen
Author_Institution
Data Storage Inst., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
Volume
49
Issue
6
fYear
2013
fDate
Jun-13
Firstpage
2786
Lastpage
2793
Abstract
Random writes significantly limit the application of flash memory in enterprise environment due to its poor latency, shorten lifetime and high garbage collection overhead. Solid-state drive (SSD) uses a small part of memory as buffer to reduce random write and extend lifetime. Existing block-based buffer management schemes exploit spatial locality to improve the write sequentiality at a cost of low buffer hit ratio. In this paper, we propose a novel buffer management scheme referred to as PAB, which adopts both buffer hit ratio and write sequentiality as design objectives. Leveraging block popularity, PAB makes full use of both temporal and spatial localities at block level. When replacement happens, PAB selects victim block based on block popularity, page counter and block dirty flag. As universal buffer, PAB serves both read and write requests to increase the possibility to form sequential write. PAB has been extensively evaluated under real enterprise workloads. Our benchmark results conclusively demonstrate that PAB can achieve up to 72% performance improvement and 308% block erasure reduction compared to existing buffer management schemes.
Keywords
buffer storage; flash memories; PAB management; SSD; block dirty flag; block erasure reduction; block level; block popularity; buffer hit ratio; flash memory; lifetime; memory buffer; page counter; performance improvement; popularity-aware buffer management; random writes; read request; real enterprise environment; solid-state drive; spatial locality; temporal locality; universal buffer; write request; write sequentiality; Block popularity; buffer management; cache hit ratio; solid-state drive (SSD); write sequentiality;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2013.2249579
Filename
6522254
Link To Document