Title :
Nonlinear optical properties and ultrafast response of GaAs-AlAs type-II quantum wells
Author :
Fu, Winston S. ; Harris, James S., Jr. ; Binder, Rolf ; Koch, Stephen W. ; Klem, John F. ; Olbright, Greg R.
Author_Institution :
Solid State Electron. Lab., Stanford Univ., CA, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
Femtosecond and CW optical nonlinearities associated with the spatial separation of electrons and holes in GaAs-AlAs type-II quantum wells are reported. Without applied electric field, the nonlinearities due to blue shift and bleaching of the heavy-hole exciton resonance are observed. An applied static longitudinal dielectric field changes these nonlinearities through the redistribution of electrons. Furthermore, optical nonlinearities and even gain for ultrahigh excitation conditions in type-II structures are reported and compared to those in similar type-I structures. The theoretical framework used for modeling the type-II system in the presence and absence of electrons is described
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; nonlinear optics; optical saturable absorption; semiconductor quantum wells; spectral line shift; CW optical nonlinearities; GaAs-AlAs; GaAs-AlAs type-II quantum wells; III-V semiconductor; MQW; absorption saturation; applied static longitudinal dielectric field; bleaching; blue shift; electron hole spatial separation; electron redistribution; even gain; femtosecond nonlinearities; heavy-hole exciton resonance; nonlinear optical properties; photoluminescence; ultrafast response; ultrahigh excitation conditions; Charge carrier processes; Electron optics; Gallium arsenide; Laser theory; Nonlinear optics; Optical devices; Optical superlattices; Quantum well lasers; Semiconductor lasers; Ultrafast optics;
Journal_Title :
Quantum Electronics, IEEE Journal of
