Title :
Large area solar cells for future space power systems
Author :
Lillington, D.R. ; Cavicchi, B.T. ; Gillanders, M.S. ; Crotty, G.T. ; Krut, D.D.
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
Abstract :
Space silicon solar cell technology has matured to the extent that large-area planar silicon cells can be fabricated in sizes up to 8 cm*8 cm with efficiencies up to approximately 15%. In order to achieve substantially higher efficiencies, cells based on GaAs are required. It is shown that, subject to certain boundary conditions, the efficiency of GaAs/Ge cells can reach 24% when used in the dual-junction configuration or approximately 19.5% if the Ge substrate is passive. The electrooptical properties of these cells are reviewed, and prospects for achieving these efficiency goals are presented. Experimental performance data are given.<>
Keywords :
III-V semiconductors; gallium arsenide; germanium; solar cells; space vehicle power plants; 19.5 percent; 24 percent; GaAs; GaAs-Ge; Ge; III-V semiconductors; Si; dual-junction configuration; electrooptical properties; solar cells; space power systems; Boundary conditions; Costs; Gallium arsenide; Manufacturing; Photovoltaic cells; Physics; Power systems; Production; Silicon; Space technology;
Journal_Title :
Aerospace and Electronic Systems Magazine, IEEE
