DocumentCode :
831710
Title :
Extensions of Models for Transistor Failure Probability Due to Neutron Fluence
Author :
Michalowicz, Joseph V. ; Ausman, George A., Jr.
Author_Institution :
Harry Diamond Laboratories Adelphi, Maryland 20783
Volume :
24
Issue :
6
fYear :
1977
Firstpage :
2365
Lastpage :
2370
Abstract :
Models developed in the Hardening Options for Neutron Effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow non-zero origins for all random variables concerned. Further, these models are generalized to consider two-transistor combinations. Test cases are calculated to compare the failure probability curves generated by these models with previous results.
Keywords :
Bipolar transistors; Circuit optimization; Data models; Monte Carlo methods; Neutrons; Performance analysis; Predictive models; Probability distribution; Random variables; Testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1977.4329223
Filename :
4329223
Link To Document :
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